Funded by the European Union‘s Horizon 2020 research and innovation programme under grant agreement No 871737.
PUBLICATIONS
| Title of the publication | Authors | Title of the journal or equivalent | Type of publication | Link to OA Repository |
| Modelling and design of FTJs as high reading-impedance synaptic devices | IUNET - UNIUD | IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021 | Conference Paper | Download |
| Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient Computational Technologies | IUNET - UNIUD | IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021 | Conference Paper | Download |
| A BEOL compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory | IBM, ETH | IEEE International Electron Devices Meeting 2020 | Conference Paper | Download |
| Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions | IBM, ETH | Phys. Status Solidi RRL 2020, 2000524 | Journal Article | Download |
| Adaptive Extreme Edge Computing for Wearable Devices | NaMLaB, UZH | Frontiers in Neuroscience | Journal Article | Download |
| Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing | NaMLaB | ACS Applied Electronic Materials | Journal Article | Download |
| Ferroelectric Tunneling Junctions for Edge Computing | NaMLab, UG, CEA, NCRSD | IEEE International Symposium on Circuits and Systems (ISCAS) 2021, special session “Memristive Technologies for Edge-Computing Applications” | Conference Paper | Download |
| Ultra-Low-Power FDSOI Neural Circuits for Extreme-Edge Neuromorphic Intelligence | UZH | IEEE Transactions on Circuits and Systems | Journal Article | Download |
| Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition | NCSRD, IBM, ETH | Applied Physics Letters; Special Topic on “HfO2 Ferroelectrics” | Journal article | Download |
| Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions | IBM, ETH | 12th Annual Non-Volatile Memories Workshop | Journal Article | Download |
| CMOS back-end-of-line compatible ferroelectric tunnel junction devices | HZB | Solid State Electronics Journal special edition ‘Letters from INFOS 2021’ | Journal Article | Download |
| Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights | IBM, ETH | IEEE JEDS | Journal Article | Download |
| High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor (accepted paper) | IBM | ESSDERC 2021 | Journal Article | Download |
| Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions | IUNET -UNIUD, CEA, NaMLab | ESSDERC 2021 | Journal Article | Available soon |
| Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model | IUNET - UNIMORE | IEEE IIRW 2021 | Journal Article | Available soon |
| Operation and design of Ferroelectric FETs for a BEOL compatile device implementation | IUNET - UNIUD | ESSDERC 2021 | Journal Article | Available soon |
| Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs. Optimal Conditions for a Synaptic Device Operation | IUNET- UNIUD, HZB | IEEE Transactions on Electron Devices | Journal Article | Available soon |
| Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware | IBM, ETH | Advanced Electronic Materials | Journal Article | Download |
| Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights | IBM, ETH | IOP Science | Journal Article | Download |
| Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions | IUNET-UNIMORE | IEEE International Reliability Physics Symposium (IRPS) | Conference Paper | Available soon |
| A 120dB Programmable Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices | NAMLAB, UZH | IEEE International Symposium on Circuits and Sys-tems (ISCAS) | Conference Paper | Available soon |
| Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures | IUNET-UNIMORE | IEEE Journal of the Electron Devices Society | Journal Article | Available soon |
| Stochastic dendrites enable online learning in mixed-signal neuromorphic processing systems | UZH | IEEE International Symposiumon Circuits and Systems (ISCAS) | Conference Paper | Available soon |
| A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films | NAMLAB | AIP Applied Physics Letters | Journal Article | Available soon |
| Interplay between charge trapping and polari-zation switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions | NAMLAB, IUNET-UNIUD | IEEE Journal of the Electron Devices Society | Journal Article | Available soon |
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