Funded by the European Union‘s Horizon 2020 research and innovation programme under grant agreement No 871737.
PUBLICATIONS
| Title of the publication | Authors | Title of the journal or equivalent | Type of publication | Link to OA Repository |
| Modelling and design of FTJs as high reading-impedance synaptic devices | IUNET - UNIUD | IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021 | Conference Paper | Download |
| Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient Computational Technologies | IUNET - UNIUD | IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021 | Conference Paper | Download |
| A BEOL compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory | IBM, ETH | IEEE International Electron Devices Meeting 2020 | Conference Paper | Download |
| Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions | IBM, ETH | Phys. Status Solidi RRL 2020, 2000524 | Journal Article | Download |
| Adaptive Extreme Edge Computing for Wearable Devices | NaMLaB, UZH | Frontiers in Neuroscience | Journal Article | Download |
| Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing | NaMLaB | ACS Applied Electronic Materials | Journal Article | Download |
| Ferroelectric Tunneling Junctions for Edge Computing | NaMLab, UG, CEA, NCRSD | IEEE International Symposium on Circuits and Systems (ISCAS) 2021, special session “Memristive Technologies for Edge-Computing Applications” | Conference Paper | Download |
| Ultra-Low-Power FDSOI Neural Circuits for Extreme-Edge Neuromorphic Intelligence | UZH | IEEE Transactions on Circuits and Systems | Journal Article | Download |
| Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition | NCSRD, IBM, ETH | Applied Physics Letters; Special Topic on “HfO2 Ferroelectrics” | Journal article | Download |
| Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions (accepted paper) | IBM, ETH | 12th Annual Non-Volatile Memories Workshop | Journal Article | Download |
| CMOS back-end-of-line compatible ferroelectric tunnel junction devices (accepted paper) | HZB | Solid State Electronics Journal special edition ‘Letters from INFOS 2021’ | Journal Article | Download |
| Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights (accepted paper) | IBM, ETH | IEEE JEDS | Journal Article | Available soon |
| High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor (accepted paper) | IBM | ESSDERC 2021 | Journal Article | Available soon |
| Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions (accepted paper) | IUNET -UNIUD, CEA, NaMLab | ESSDERC 2021 | Journal Article | Available soon |
| Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model (accepted paper) | IUNET - UNIMORE | IEEE IIRW 2021 | Journal Article | Available soon |
| Operation and design of Ferroelectric FETs for a BEOL compatile device implementation (accepted paper) | IUNET - UNIUD | ESSDERC 2021 | Journal Article | Available soon |
RESEARCH NEWSLETTERS
Project's Research Newsletter June 2020 -
Project's Research Newsletter June 2021 -
