Authors

Title of the publication

Title of the journal or equivalent

Type of publication

Link to OA

IUNET - UNIUD

Modelling and design of FTJs as high reading-impedance synaptic devices

IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021

Conference Paper

http://arxiv.org/abs/2105.00752

IUNET - UNIUD

Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient Computational Technologies

IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021

Conference Paper

http://arxiv.org/abs/2105.00864

IBM, ETH

A BEOL compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

IEEE International Electron Devices Meeting 2020

Conference Paper

https://zenodo.org/record/4768028#.YKKpaKGxWUk

NCSRD, IBM, ETH

Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition

Applied Physics Letters; Special Topic on “HfO2 Ferroelectrics”

Journal Article

https://arxiv.org/abs/2006.14270 

UZH

Ultra-Low-Power FDSOI Neural Circuits for Extreme-Edge Neuromorphic Intelligence

IEEE Transactions on Circuits and Systems

Journal Article

https://ieeexplore.ieee.org/document/9259075

IBM, ETH

Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions

Phys. Status Solidi RRL 2020, 2000524

Journal Article

https://zenodo.org/record/4655389#.YG10kT-xWuU

NaMLaB, UZH

Adaptive Extreme Edge Computing for Wearable Devices

Frontiers in Neuroscience

Journal Article

https://arxiv.org/abs/2012.14937

NaMLaB

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

ACS Applied Electronic Materials

Journal Article

NaMLab, UG, CEA, NCRSD

Ferroelectric Tunneling Junctions for Edge Computing

IEEE International Symposium on Circuits and Systems (ISCAS) 2021, special session “Memristive Technologies for Edge-Computing Applications”

Conference Paper